Direct band gap narrowing in highly doped Ge

Direct band gap narrowing in highly doped Ge

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Empirical determination of the energy band gap narrowing in highly doped n+ silicon

Empirical determination of the energy band gap narrowing in p+ silicon heavily doped with boron

Band gap narrowing in nitrogen-doped La2Ti2O7 predicted by density-functional theory calculations.

In order to reveal the origin of enhanced photocatalytic activity of N-doped La2Ti2O7 in both the visible light and ultraviolet light regions, its electronic structure has been studied using spin-polarized conventional density functional theory (DFT) and the Heyd-Scuseria-Ernzerhof (HSE06) hybrid approach. The results show that the deep localized states are formed in the forbidden band when nit...

Investigation of band gap narrowing in nitrogen-doped La2Ti2O7 with transient absorption spectroscopy.

Doping a semiconductor can extend the light absorption range, however, it usually introduces mid-gap states, reducing the charge carrier lifetime. This report shows that doping lanthanum dititinate (La2Ti2O7) with nitrogen extends the valence band edge by creating a continuum of dopant states, increasing the light absorption edge from 380 nm to 550 nm without adding mid-gap states. The dopant s...